SI7884BDP-T1-E3
MOSFET N-CH 40V 58A PPAK SO-8
part Number：
SI7884BDP-T1-E3
Alternative Model：
SI7884BDP-T1-GE3,SIR470DP-T1-GE3,NTCG103JF103FT1,TEN 8-2411WI,N262-06N-BK,AMC1300BQDWVRQ1,TFM-120-02-L-DH-TR,TEN 20-2411WIN,SFM-120-02-L-D-LC,LTC3789EGN#PBF
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 40V 58A PPAK SO-8
RoHS：
YES
SI7884BDP-T1-E3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
77 nC @ 10 V
Supplier Device Package：
PowerPAK® SO-8
Package / Case：
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C：
58A (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
3540 pF @ 20 V
Power Dissipation (Max)：
4.6W (Ta), 46W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：4530
quantity
unit price
International prices
3000
1.51
4530
6000
1.44
8640
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