SI9407BDY-T1-E3
MOSFET P-CH 60V 4.7A 8SO
part Number:
SI9407BDY-T1-E3
Alternative Model:
DMP6110SSS-13,SI9407BDY-T1-GE3,2059570571,SQ9407EY-T1_BE3,3221-10-0300-00-TR,DMP6110SSSQ-13,SQ9407EY-T1_GE3,MEM2075-00-140-01-A,2N7002,0026013116,SBRD10200,JXR0-0011NL,DLW5ATH501TQ2L,AO4421,0430450601
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 60V 4.7A 8SO
RoHS:
YES
SI9407BDY-T1-E3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Vgs(th) (Max) @ Id:
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Power Dissipation (Max):
5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 30 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 3.2A, 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:21705
quantity
unit price
International prices
2500
0.61
1525
5000
0.58
2900
12500
0.55
6875
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