SIS434DN-T1-GE3
MOSFET N-CH 40V 35A PPAK 1212-8
part Number：
SIS434DN-T1-GE3
Alternative Model：
1N4148WS,SIS443DN-T1-GE3,FDLL4148,LM78L05ACZ/NOPB,SI7611DN-T1-GE3,SI7309DN-T1-GE3,LTC4041EUFD#TRPBF,SN74LVC1T45DCKR,REF3012AIDBZR,LTC3351IUFF#TRPBF,SI7308DN-T1-GE3,AMC1301DWVR,SQS401EN-T1_BE3,SIS438DN-T1-GE3,DSF106Q3R0C
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 40V 35A PPAK 1212-8
RoHS：
YES
SIS434DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs：
40 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
35A (Tc)
Power Dissipation (Max)：
3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs：
7.6mOhm @ 16.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
1530 pF @ 20 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2261
quantity
unit price
International prices
3000
0.43
1290
6000
0.41
2460
9000
0.39
3510
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