SIS438DN-T1-GE3
MOSFET N-CH 20V 16A PPAK 1212-8
part Number:
SIS438DN-T1-GE3
Alternative Model:
BSZ060NE2LSATMA1,0937698628,ERT-J1VG103FA,LTC3350IUHF#PBF,BZT52C5V6LP-7,LTC3350EUHF#TRPBF,NFM21CC223R1H3D,SI7148DP-T1-E3,SIS434DN-T1-GE3,SI2374DS-T1-GE3,1N4448HWT-7,ADM6-60-01.5-L-4-2-A-TR,LCW-105-08-T-S-300,SIT1602BI-12-18E-26.000000,SQS411ENW-T1_GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 20V 16A PPAK 1212-8
RoHS:
YES
SIS438DN-T1-GE3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
PowerPAK® 1212-8
Package / Case:
PowerPAK® 1212-8
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 10 V
Power Dissipation (Max):
3.5W (Ta), 27.7W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:64969
quantity
unit price
International prices
3000
0.34
1020
6000
0.32
1920
9000
0.3
2700
30000
0.3
9000
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