STH180N10F3-2
MOSFET N-CH 100V 180A H2PAK-2
part Number：
STH180N10F3-2
Alternative Model：
EP3C40F484C8N,VND5050AJTR-E,SQM120P06-07L_GE3,TC265D40F200NBCKXUMA1,TEL 3-2411,MC56F8367VPYE,SPC5517EBMLQ66,TPS84250RKGT,AQY211G2SX,0878325622,178-015-313R491,178-015-513R491,N3429-5303RB,3-794620-6,SD08H0SBD
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 100V 180A H2PAK-2
RoHS：
YES
STH180N10F3-2 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：
H2PAK-2
Current - Continuous Drain (Id) @ 25°C：
180A (Tc)
Power Dissipation (Max)：
315W (Tc)
Rds On (Max) @ Id, Vgs：
4.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs：
114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
6665 pF @ 25 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1000
3.04
3040
2000
2.86
5720
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