SSM6J501NU,LF
MOSFET P-CH 20V 10A 6UDFNB
part Number:
SSM6J501NU,LF
Alternative Model:
2SC4117-BL,LF,ESDA25P35-1U1M,MPM3620GQV-Z,MT25QL256ABA1EW9-0SIT,RUC002N05T116,SL36AFL-TP,SSM3K116TU,LF,SSM6J507NU,LF,AP7361EA-SPR-13,ESD7381MUT5G,TPS54140ADRCR,ATS-FPX035035010-55-C2-R0,ESD242B1W01005E6327XTSA1,SIA931DJ-T1-GE3,MMICT5838-00-012
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 20V 10A 6UDFNB
RoHS:
YES
SSM6J501NU,LF specifications
Mounting Type:
Surface Mount
Package / Case:
6-WDFN Exposed Pad
Operating Temperature:
150°C (TJ)
Technology:
MOSFET (Metal Oxide)
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Vgs(th) (Max) @ Id:
1V @ 1mA
Power Dissipation (Max):
1W (Ta)
Supplier Device Package:
6-UDFNB (2x2)
Rds On (Max) @ Id, Vgs:
15.3mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:
29.9 nC @ 4.5 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:4376
quantity
unit price
International prices
3000
0.13
390
6000
0.13
780
9000
0.12
1080
30000
0.12
3600
75000
0.11
8250
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