STH110N10F7-2
MOSFET N CH 100V 110A H2PAK
part Number：
STH110N10F7-2
Alternative Model：
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N CH 100V 110A H2PAK
RoHS：
YES
STH110N10F7-2 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Power Dissipation (Max)：
150W (Tc)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C：
110A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
72 nC @ 10 V
Supplier Device Package：
H2PAK-2
Rds On (Max) @ Id, Vgs：
6.5mOhm @ 55A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
5117 pF @ 50 V
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