STFI6N65K3
MOSFET N-CH 650V 5.4A I2PAKFP
part Number：
STFI6N65K3
Alternative Model：
manufacturer：
STMicroelectronics
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 650V 5.4A I2PAKFP
RoHS：
YES
STFI6N65K3 specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
650 V
Power Dissipation (Max)：
30W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
33 nC @ 10 V
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Supplier Device Package：
TO-281 (I2PAKFP)
Package / Case：
TO-262-3 Full Pack, I2PAK
Current - Continuous Drain (Id) @ 25°C：
5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
880 pF @ 50 V
Rds On (Max) @ Id, Vgs：
1.3Ohm @ 2.7A, 10V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2100
quantity
unit price
International prices
1
7.38
7.38
50
5.89
294.5
100
5.27
527
500
4.65
2325
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