SCT2450KEC
SICFET N-CH 1200V 10A TO247
part Number:
SCT2450KEC
Alternative Model:
SCT2450KEGC11,SCT2450KEHRC11,C2M0280120D,MCP6562-E/SN,IXFH24N90P,G3R350MT12D,SMCJ120A-TP,MC78L05ACPRAG,BAT54HT1G,MIC4452YN,US1M-13-F,PV36W103C01B00
manufacturer:
ROHM Semiconductor
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
SICFET N-CH 1200V 10A TO247
RoHS:
YES
SCT2450KEC specifications
Mounting Type:
Through Hole
FET Type:
N-Channel
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Drain to Source Voltage (Vdss):
1200 V
Technology:
SiCFET (Silicon Carbide)
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
85W (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V
Vgs (Max):
+22V, -6V
Vgs(th) (Max) @ Id:
4V @ 900µA
Rds On (Max) @ Id, Vgs:
585mOhm @ 3A, 18V
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds:
463 pF @ 800 V
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Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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