SSM6K217FE,LF
MOSFET N-CH 40V 1.8A ES6
part Number：
SSM6K217FE,LF
Alternative Model：
SSM6H19NU,LF,SSM3K339R,LF,DTC123EETL,SMLA12ENTT86,PMPB14XNX,BAV99-E3-08,SML-A12UTT86J,ADS1220IRVAR,8.0SMDJ22CA,SQ4401CEY-T1_GE3,PFNF.012.2,AD5693RARMZ,BLM15PX121SN1D,OPA735AIDBVT,SIT8008BC-33-33E-100.000000
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 40V 1.8A ES6
RoHS：
YES
SSM6K217FE,LF specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Vgs (Max)：
±12V
Package / Case：
SOT-563, SOT-666
Supplier Device Package：
ES6
Current - Continuous Drain (Id) @ 25°C：
1.8A (Ta)
Power Dissipation (Max)：
500mW (Ta)
Vgs(th) (Max) @ Id：
1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 8V
Gate Charge (Qg) (Max) @ Vgs：
1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds：
130 pF @ 10 V
Rds On (Max) @ Id, Vgs：
195mOhm @ 1A, 8V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1632
quantity
unit price
International prices
4000
0.1
400
8000
0.1
800
12000
0.09
1080
28000
0.09
2520
100000
0.09
9000
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