STH150N10F7-2
MOSFET N-CH 100V 110A H2PAK-2
part Number:
STH150N10F7-2
Alternative Model:
AOB66916L,SUM70040E-GE3,PSMN4R4-80BS,118,STH310N10F7-2,STH240N10F7-6,J115F11A48VDCS6.9,1245HC80-RTR,TPH3R70APL,L1Q,STH315N10F7-2,MCB130N10Y-TP,MGS64812,MGW64815,0679L9150-01,1720482,LTV-352T
manufacturer:
STMicroelectronics
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 100V 110A H2PAK-2
RoHS:
YES
STH150N10F7-2 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Drain to Source Voltage (Vdss):
100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Operating Temperature:
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
250W (Tc)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Gate Charge (Qg) (Max) @ Vgs:
117 nC @ 10 V
Supplier Device Package:
H2PAK-2
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 55A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
8115 pF @ 50 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:2600
quantity
unit price
International prices
1000
2.09
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1.97
3940
5000
1.89
9450
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